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2015-2016 2017-2018 2019-2020 2021-2022 2023-2024

2015 - 2016

papel	autor	Revista de publicación
Characterization of GaN MOS-HEMT trap-related effects for power switching applications	D. Zhang	M. S. Thesis, U. Illinois
Deep ultraviolet photodiodes based on the β-Ga2O3/GaN heterojunction	S. Nakagomi, T. Sato, Y. Takahashi and Y. Kokubun	Sens. Actuator A Phys.
101-GHz InAlN/GaN HEMTs on Silicon With High Johnson’s Figure-of-Merit	C. -W. Tsou, C. -Y. Lin, Y. -W. Lian and S. S. H. Hsu	IEEE Trans. Electron Devices
Top–down fabrication of horizontally-aligned gallium nitride nanowire arrays for sensor development	G. Liu, B. Wen, T. Xie, A. Castillo, J.-Y. Ha, N. Sullivan, R. Debnath, A. Davydov, M. Peckerar and A. Motayed	Microelectronic Eng.
Interface trap states in Al2O3/AlGaN/GaN structure induced by inductively coupled plasma etching of AlGaN surfaces	Z. Yatabe, J. T. Asubar, T. Sato and T. Hashizume	Phys. Status Solidi A
Sezawa propagation mode in GaN on Si surface acoustic wave type temperature sensor structures operating at GHz frequencies	A. Müller, I. Giangu, A. Stavrinidis, A. Stefanescu, G. Stavrinidis, A. Dinescu and G. Konstantinidis	IEEE Electron Device Lett.
Investigation of V-Ti/Al/Ni/Au Ohmic contact to AlGaN/GaN heterostructures with a thin GaN cap layer	S. M. Jung, C. T. Lee and M. W. Shin	Semicond. Sci. Technol.
Effect of post-deposition annealing on the interface electronic structures of Al2O3-Capped GaN and GaN/AlGaN/GaN heterostructure	T. L. Duan, J. S. Pan, D. S. Ang	ECS J. Solid State Sci. Technol.
Reduced interface states of atomic-layer-deposited Al2O3/AlGaN/GaN heterostructure containing in situ grown AlN/GaN cap layer and subjected to thermal oxidation	W. -C. Liao, C. -T. Chiang, J. -I. Chyi and Y. -M. Hsin	J. Electrochem. Soc.
Design, fabrication, and optical characteristics of freestanding GaN waveguides on silicon substrate	T. Sekiya, T. Sasaki and K. Hane	J. Vac. Sci. Technol. B
An integrated gas sensing system based on surface-functionalized gallium nitride nanowires with embedded micro-heaters	G. Liu	PhD. S. Dissertation, U. Maryland
III-V nitride based microcantilever heaters for unique multimodal detection of volatile organic compounds at low temperature	I. Jahangir	M. Eng. Thesis, U. South Carolina
Novel high-k dielectric enhanced III-nitride devices	T. -H. Hung	PhD. S. Dissertation, Ohio State U.
Study on the reduction of access resistance of InAlN/GaN high electron mobility transistors	L. Yi	PhD. S. Dissertation, NUS
Effects of surface morphology and C concentration in C-doped GaN buffer on breakdown voltage of AlGaN/GaN HEMTs on free-standing GaN substrate	S. Tanabe, N. Watanabe, M. Uchida and H. Matsuzaki	Phys. Status Solidi A
Investigation of surface band bending of Ga-Face GaN by angle-resolved x-ray photoelectron spectroscopy	T. L. Duan, J. S. Pan and D. S. Ang	ECS J. Solid State Sci. Technol.
Vertical 2D/3D semiconductor heterostructures based on epitaxial molybdenum disulfide and gallium nitride	D. Ruzmetov, K. Zhang, G. Stan, B. Kalanyan, G. R. Bhimanapati, S. M. Eichfeld, R. A. Burke, P. B. Shah, T. P. O’Regan, F. J. Crown, A. G. Birdwel, J. A. Robinon, A. V. Davydv and T. G. Ivanov	ACS Nano
High sensitivity, GHz operating SAW pressure sensor structures manufactured by micromachining and nano-processing of GaN/Si	A. Müller, A. Stavrinidis, I. Giangu, A. Stefanescu, G. Stavrinidis, A. Pantazis, A. Dinescu, G. Boldeiu and G. Konstantinidis	IEEE MTT-S IMS
The role of barrier transport and traps in the tradeoff between low OFF-state leakage current and improved dynamic stability of AlGaN/GaN HFETs	S. Mehari, A. Gavrilov, M. Eizenberg and D. Ritter	IEEE Trans. Electron Devices
Crystal orientations of β-Ga2O3 thin films formed on c-plane GaN substrate	S. Nakagomi and Y. Kokubun	Phys. Status Solidi B
Influence of Au-based metallization on the phase velocity of GaN on Si surface acoustic wave resonators	A. Stefanescu, A. Müller, I. Giangu, A. Dinescu and G. Konstantinidis	IEEE Electron Device Lett.
Time-dependent threshold voltage drift induced by interface traps in normally-off GaN MOSFET with different gate recess technique	F. Sang, M. Wang, M. Tao, S. Liu, M. Yu, B. Xie, C. P. Wen, J. Wang, W. Wu, Y. Hao and B. Shen	Appl. Phys. Express
Hybrid sensor based on AlGaN/GaN molecular controlled device	M. Eckshtain-Levi, E. Capua, Y. Paltiel and R. Naaman	ACS Sens.
Modeling the performance limits of novel microcantilever heaters for volatile organic compound detection	I. Jahangir and G. Koley	J Micromech. Microeng.
Cold denaturation induces inversion of dipole and spin transfer in chiral peptide monolayers	M. Eckshtain-Levi, E. Capua, S. Refaely-Abramson, S. Sarkar, Y. Gavrilov, S. P. Mathew, Y. Paltiel, Y. Levy, L. Kronik and R. Naaman	Nat. Commun.

PARTE SUPERIOR DE LA PÁGINA

2017 - 2018

papel	autor	Revista de publicación
Ultrasonic assisted mist chemical vapor deposition deposited MgO for AlGaNGaN metal-insulator-semiconductor ultraviolet photodetector	H. -Y. Liu, C. -S. Lee, G. -J. Liu and R. -C. Huang	IEEE Sens. Lett.
Stability of AlGaN/GaN heterostructures after hydrogen plasma treatment	O. Babchenko, J. Dzuba, T. Lalinský, M. Vojsb, A. Vincze, T. Ižák and G. Vankoa	Appl. Surf. Sci.
Structural and electrical analysis of epitaxial 2D/3D vertical heterojunctions of monolayer MoS2 on GaN	T. P. O'Regan, D. Ruzmetov, M. R. Neupane, R. A. Burke, A. A. Herzing, K. Zhang, A. G. Birdwell, D. E. Taylor, E. F. C. Byrd, S. D. Walck, A. V. Davydov, J. A. Robinson and T. G. Ivanov	Appl. Phys. Lett.
Device Characteristics of AlGaN/GaN HEMTs with p-GaN Cap Layer	C. -H. Li, Y. -C. Jiang, H. -C. Tsai, Y. -N. Zhong and Y. -M. Hsin	ECS J. Solid State Sci. Technol.
GaN membrane supported SAW pressure sensors with embedded temperature sensing capability	A. Müller, G. Konstantinidis, I. Giangu, G. C. Adam, A. Stefanescu, A. Stavrinidis, G. Stavrinidis, A. Kostopoulos, G. Boldeiu and A. Dinescu	IEEE Sens. J.
Polymer bonding of GaN crystal layer on silicon substrate for micro mechanical resonator applications	T. Sasaki, Y. Hayakawa and K. Hane	Microsyst Technol.
Surface band bending and interface alignment of plasma-enhanced atomic layer deposited SiO2 on AlxGa1-xN	B. S. Eller and R. J. Nemanich	J. Appl. Phys.
Van der Waals interfaces in epitaxial vertical metal/2D/3D semiconductor heterojunctions of monolayer MoS2 and GaN	D. Ruzmetov, M. R Neupane, A. Herzing,T. P. O'Regan, A. Mazzoni, M. L. Chin, R. A. Burke, F. J. Crowne, A. G. Birdwell, D. E. Taylor, A. Kolmakov, K. Zhang, J. A. Robinson, A. V. Davydov and T. G. Ivanov	2D Mater
Buffer-induced current collapse in GaN HEMTs on highly resistive Si substrates	H. Chandrasekar, M. J. Uren, A. Eblabla, H. Hirshy, M. A. Casbon, P. J. Tasker, K. Elgaid and M. Kuball	IEEE Electron Device Lett
High temperature AlGaN/GaN membrane based pressure sensors	D. Gajula, I. Jahangir and G. Koley	Micromachines
AlGaN/GaN HEMTs with 2DHG back gate control	W. -T. Lin, W. -C. Liao, Y. -N. Zhong and Y. -M. Hsin	MRS Advances
Band pass filters based on GaN/Si lumped-eement SAW resonators operating at frequencies above 5 GHz	D. Neculoiu, A. -C. Bunea, A. M. Dinescu and L. A. Farhat	IEEE Access
AlGaN/GaN MIS-HEMTs with a p-GaN cap layer	C. -C. Hsu, P. -C. Shen, Y. -N. Zhong and Y. -M. Hsin	MRS Advances
Determination of suitable indicators of AlGaN/GaN HEMT wafer quality based on wafer test and device characteristics	Y. -N. Zhong, S. -W. Tang and Y. -M. Hsin	Phys. Status Solidi A
Correlation between border traps and exposed surface properties in gate recessed normally-off Al2O3/GaN MOSFET	R. Yin, Y. Li, Y. Sun, C. P. Wen, Y. Hao and M. Wanga	Appl. Phys. Lett
Study on electronic properties of diamond/SiNx-coated AlGaN/GaN high electron mobility transistors operating up to 500 °C	O. Babchenko, G. Vanko, M. Gerboc, T. Ižák, M. Vojs, T. Lalinskýa and A. Kromka	Diam. Relat. Mater
Injection of spin-polarized electrons into a AlGaN/GaN device from an electrochemical cell: evidence for an extremely long apin lifetime	A. Kumar, E. Capua, C. Fontanesi, R. Carmieli and R. Naaman	ACS Nano
AlGaN/GaN MOSHFETs using ALD dielectrics: A study in performance and reliability	F. Azam	PhD. Dissertations, North Carolina State U

PARTE SUPERIOR DE LA PÁGINA

2019 - 2020

papel	autor	Revista de publicación
High-performance ultraviolet light detection using nano-scale-fin isolation AlGaN/GaN heterostructures with ZnO nanorods	F. Khan, W. Khan and S. -D. Kim	Nanomaterials
Gallium nitride microcantilever heater based VOC ssensors and monitoring system development	S. S. Gorman	M. S. Thesis, Clemson U
Temperature dependence of sensitivity of 2DEG-based Hall-efffect sensors	H. S. Alpert, C. A. Chapin, K. M. Dowling, S. R. Benbrook, H. Köck, U. Ausserlechner and D. G. Senesky	arXiv
Metal-covered van der Waals epitaxy of gallium nitride films on graphitic substrates by ECR-MBE	U. Ooe, S. Mouri, S. Arakawa, F. B. Abas, Y. Nanishi and T. Araki	Jpn. J. Appl. Phys.
Study of edge and screw dislocation density in GaN/Al2O3 heterostructure	V. L. Ene, D. Dinescu, I. Zai, N. Djourelov, B. S. Vasile, A. B. Serban, V. Leca and E. Andronescu	Materials
Molybdenum trioxide gates for suppression of leakage current in InAlN/GaN HEMTs at 300°C	C. A. Chapin, S. R. Benbrook, C. Leblanc and D. G. Senesky	arXiv
Effect of geometry on sensitivity and offset of AlGaN/GaN and InAlN/GaN Hall-effect sensors	H. S. Alpert, K. M. Dowling, Ca. A. Chapin, A. S. Yalamarthy, S. R. Benbrook, H. Köck; U. Ausserlechner and D. G. Senesky	IEEE Sens. J
Impact of volatile organic compound exposure on electrical breakdown in GaN dual channel microcantilevers	S. Gorman, D. Gajula, S. Kim and G. Koley	Appl. Phys. Lett
Improving the GaN-on-GaN schottky barrier diode by ALD-AlN tunneling barrier layer and multi-fins structure	S. W. H. Chen, D. R. Yang, N. J. You, W. C. Ho, J. Tzou, H. C. Kuo and J. M. Shieh	IEEE Trans. Nanotechnol
Low-power pH sensor based on narrow channel open-gated Al0.25Ga0.75N/GaN HEMT and package integrated polydimethylsiloxane microchannels	X. Yang, J. Ao, S. Wu, S. Ma, X. Li, L. Hu, W. Liu and C. Han	Materials
H2 detection using plasmonically generated surface photoacoustic waves in Pd nanoparticle-deposited GaN microcantilevers	D. Khan, H. Li, D. Gajula, F. Bayram and G. Koley	ACS Sens.
Defect structure determination of GaN films in GaN/AlN/Si heterostructures by HR-TEM, XRD, and slow positrons experiments	V. L. Ene, D. Dinescu, N. Djourelov, I. Zai, B. S. Vasile, A. B. Serban, V. Leca and E. Andronescu	Nanomaterials
Engineering a unified dielectric solution for AlGaN/GaN MOS-HFET gate and access regions	F. Azam, A. Tanneeru, B. Lee and V. Misra	IEEE Trans. Electron Devices
Photoacoustic detection of H2 and NH3 using plasmonic signal enhancement in GaN microcantilevers	D. Khan, H. Li, F. Bayram, D. Gajula and G. Koley	Micromachines
Sensitivity of 2DEG-based Hall-effect sensors at high temperatures	H. S. Alpert, C. A. Chapin, K. M. Dowling, S. R. Benbrook, H. Köck, U. Ausserlechner and D. G. Senesky	Rev. Sci. Instrum.
Interference of co-propagating Rayleigh and Sezawa waves observed with micro-focused Brillouin light scattering spectroscopy	M. Geilen, F. Kohl, A. Nicoloiu, A. Müller, B. Hillebrands and P. Pirro	Appl. Phys. Lett
An analytical model for AlGaN/GaN MOS-HEMT for high power applications	N. -T. Do, N.- H. Thoan, T. M. Quang, D. A. Tuan and N. -N. Trung	Adv. Mater
Two-dimensional materials preparation, characterization, and device integration for novel applications	M. D. Valentin	PhD. Dissertations, UC Riverside

PARTE SUPERIOR DE LA PÁGINA

2021 - 2022

papel	autor	Revista de publicación
Effect of the lattice mismatch on threading dislocations in heteroepitaxial GaN layers revealed by X-ray diffraction	C. Romanitan, I. Mihalache, O. Tutunaru and C.Pachiu	J. Alloys Compd.
Accelerated Beta Radiation Aging of Interlayer Titanium Nitride in Gallium Nitride Contacts	D. D. Schwellenbach	OSTI.gov
Studies of Defect Structure in Epitaxial AlN/GaN Films Grown on (111) 3C-SiC	A. Bianca Serban, V. L. Ene, D. Dinescu, I. Zai, N. Djourelov, B. S. Vasile and V. Leca	Nanomaterials
Voltage triggered near-infrared light modulation using VO2 thin film	F. Bayram, D. Gajula, D. Khan, B. Uppalapati, S. Azad and G. Koley	Opt. Express
Epitaxial Intercalation Growth of Scalable Hexagonal Boron Nitride/Graphene Bilayer Moiré Materials with Highly Convergent Interlayer Angles	S. Wang, J. Crowther, H. Kageshima, H. Hibino and Y. Taniyasu	ACS Nano
Impact of selective thermal etching in mixed H2/NH3 atmosphere on crystal quality of AlGaN/GaN heterostructures	Y. Yoshiya, T. Hoshi, H. Sugiyama and H. Matsuzaki	Jpn. J. Appl. Phys.
Dependence of Electrical Characteristics on Epitaxial Layer Structure of AlGaN/GaN HEMTs Fabricated on Freestanding GaN Substrates	Y. Ando, R. Makisako, H. Takahashi, A. Wakejima and J. Suda	IEEE Trans. Electron. Devices
Extended Exposure of Gallium Nitride Heterostructure Devices to a Simulated Venus Environment	S. R. Eisner, H. S. Alpert, C. A. Chapin, A. S. Yalamarthy, P. F. Satterthwaite, A. Nasiri, S. Port, S. Ang and D. G. Senesky	Proc. IEEE Aerospace Conf.
Plasmon Enhanced GaN Mems Photoacoustic Sensors	D. Khan	PhD. Dissertation, Clemson U.
Output Phase and Amplitude Analysis of GaN-Based HEMT at Cryogenic Temperatures	H. Guo, J. Zhou, M. Wang and X. Zou	IEEE Microw. Wirel. Compon. Lett .
Scandium-Based Ohmic Contacts to InAlN/GaN Heterostructures on Silicon	V. S. Charan, S. Vura, R. Muralidharan, S. Raghavan and D. N. Nath	IEEE Electron Device Lett.
Fully Resonant Magneto-elastic Spin-wave Excitation by Surface Acoustic Waves under Conservation of Energy and Linear Momentum	M. Geilen, A. Nicoloiu, D. Narducci, M. Mohseni, M. Bechberger, M. Ender, F. Ciubotaru, A. Müller, B. Hillebrands, C. Adelmann and P. Pirro	arXiv
Epitaxial Molybdenum Disulfide/Gallium Nitride Junctions: Low-Knee-Voltage Schottky-Diode Behavior at Optimized Interfaces	H. I. Yang, D. J. Coyle, M. Wurch, P. R. Yadav, M. D. Valentin, M. R. Neupane, K. Almeida and L. Bartels	ACS Appl. Mater. Interfaces
Temperature-Dependent Dynamic Degradation of Carbon-Doped GaN HEMTs	Y. Gu, Y. Wang, J. Chen, B. Chen, M. Wang and X. Zou	IEEE Trans. Electron Devices
Investigation of Multi-Mesa-Channel-Structured AlGaN/GaN MOSHEMTs with SiO2 Gate Oxide Layer	J. -J. Jian, H. -Y. Lee, E. -Y. Chang and C. -T. Lee	Coatings
Influence of SiON interlayer on the diamond/GaN heterostructures studied by Raman and SIMS measurements	T. Izsák, G. Vanko, O. Babčenko, A. Vincze, M. Vojs, B. Zaťko and A.Kromka	Mater. Sci. Eng. B

PARTE SUPERIOR DE LA PÁGINA

2023 - 2024

papel	autor	Revista de publicación
Mechanical memory operations in piezotransistive GaN microcantilevers using Au nanoparticle-enhanced photoacoustic excitation	F. Bayram, D. Gajula, D. Khan and G. Koley	Microsyst. Nanoeng.
High-Performance Enhancement-Mode p-Channel GaN MISFETs With Steep Subthreshold Swing	Y. Yin and K. B. Le	IEEE Electron Device Lett.
The Atomic Layer Etching Technique with Surface Treatment Function for InAlN/GaN Heterostructure	F. Du, Y. Jiang, Z. Wu, H. Lu, J. He, C. Tang, Q. Hu, K. Wen, X. Tang, H. Hong, H. Yu and Q. Wang	Crystals
An AlGaN/GaN Dual Channel Triangular Microcantilever Based UV Detector	B. Uppalapati, D. Gajula, F. Bayram, A. Kota, A. Gunn, D. Khan, V. P. Chodavarapu and G. Koley	ACS Photonics
Investigation of Temperature Sensing Capabilities of GaN/SiC and GaN/Sapphire Surface Acoustic Wave Devices	G. Boldeiu, G. E. Ponchak, A. Nicoloiu, C. Nastase, I. Zdru, A. Dinescua and A. Mülle	IEEE Access
Fully resonant magneto-elastic spin-wave excitation by surface acoustic waves under conservation of energy and linear momentum	M. Geilen, A. Nicoloiu, D. Narducci, M. Mohseni, M. Bechberger, M. Ender, F. Ciubotaru, B. Hillebrands, A. Müller, C. Adelmann and P. Pirro	Appl. Phys. Lett.
Microscopic formation mechanism of Si/Tl5Al1/TiN ohmic contact on non-recessed i-InAlN/GaN heterostructures with ultra-low resistance	Y. Jiang, F. Z. Du, J. Q. He, Z. P. Qiao, C. Y. Tang, X. Y. Tang, Z. R. Wang, Q. Wang and H.Y. Yu	Semicond. Sci. Technol.

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