If you have any problems with material analysis, please feel free to contact us.

We, NTT ADVANCE TECHNOLOGY (NTT-AT), have the material analysis know-how cultivated over many years at NTT laboratories. specializes in the analysis of
We support your research and development with a wide range of service lineups according to your purpose.

• Analysis flow
• Location information　
• Main public qualification

Detection sensitivity and size of analysis method (image)

If you hover the mouse over the name of each analysis method in the figure below, the target size of that analysis will be displayed. Click to go to the details page for each analysis.
* It may not work properly on smartphones and tablets.

• Morphological observation
• surface analysis　
• chemical analysis

Morphological observation

Device, material morphology/structure, composition evaluation
 

Analysis method	Information obtained	Application example	Surface resolution
TEMs transmission electron microscope	Cross-sectional structure	Cross-sectional observation of semiconductor devices, FFT	0.2nm
FIB-SEM	Information such as internal voids and defects	Defect analysis of porous ceramics
SEM scanning electron microscope	Observation of surface shape	Detailed shape observation of defective parts	2nm
AFM atomic force microscope	Observation of surface microscopic unevenness	Silicon micro-roughness measurement	several nanometers

 

surface analysis

Any kind of analysis requires "know-how" including measurement conditions and pretreatment. At our company, we propose the optimal analysis method according to various conditions such as the customer's purpose of analysis, sample condition, resolution and detection sensitivity, etc., and our strength is to perform analysis that reflects the original sample information.
 

Analysis method	Information obtained	Application example	analysis element and Detection limit concentration	depth resolution and Surface resolution
SIMS Secondary ion mass spectrometry	I want to obtain the concentration of impurities with high sensitivity.	Dopant depth distribution	H～U ppb to ppm	A few to several tens of nm 1 to several tens of μm
XPS X-ray photoelectron spectroscopy	Surface composition and chemical state	Surface oxidation state, surface contamination	Li to U 0.1-1%	>2nm >30μm
AES Auger electron spectroscopy	Structure depth information Elemental analysis of minute parts	Structure of thin film, qualitative analysis of contaminants	Li to U 0.1-1%	>2nm >15nm

chemical analysis

Main holding equipment

Analysis method	Information obtained	Application example	analysis element	Detection limit concentration
ICP-MS inductively coupled plasma mass spectrometry	High sensitivity elemental analysis ・Solution analysis ・Fracture analysis	Analysis of trace metals on Si wafers, trace metals in the environment, and impurities in pure water	Elements other than halogen, inert gas, H, C, N, O	ppt~ (depending on measurement target)
I C Ion chromatographic analysis	Analysis of highly sensitive solutions Qualitative and quantitative analysis of ions	Clean room atmosphere survey	anions, cations, organic acid ions	ppt to ppm (depending on measurement target)
TXRF Total reflection X-ray fluorescence analysis	High sensitivity elemental analysis ・Non-destructive ・Non-contact	Wafer surface contamination Compound semiconductors other than Si substrates (sapphire, SiC, GaN, etc.)	Na to U	​109 atoms/ cm2
GC-MS gas chromatograph mass spectrometry	Qualitative and quantitative analysis of organic compounds, Structural analysis	Identification of organic compounds, structure determination, organic matter analysis during CR	Elements other than halogen, inert gas, H, C, N, O	ppb~ (depending on measurement target)
XRF X-ray fluorescence analysis	Elemental analysis	Thin film/powder/bulk composition qualitative analysis	B～U	～0.01％
ICP-AES ICP emission spectrometry	trace elemental analysis, Multi-element analysis	Composition analysis of various materials and thin films	Elements other than halogen, inert gas, H, C, N, O	ppb~ (depending on measurement target)

 

 

Test characterization

We evaluate and measure the optical properties of optical communication materials, gas permeability, viscoelasticity, thermophysical properties, and powder properties of materials.

Analysis content	Information obtained
gas permeability	(Gas/water vapor) permeability
Viscoelasticity	Dynamic viscoelasticity (tension, bending, torsion), melt viscoelasticity
thermophysical properties	Glass transition point of material, heat value/weight change
Powder properties	Specific surface area (BET method), particle size distribution (laser diffraction method/dynamic light scattering method), pore distribution
Endotoxin analysis　(displays an external site in a new window)	endotoxin concentration

Analysis flow

At NTT-AT 's Materials Analysis Center, we not only provide analytical data, but also propose problem-solving methods using optimal methods based on the problems raised by our customers.
 

Please contact us first.

Our analysis services help customers solve various problems.
Please contact us using the contact button on the bottom right.
*If your request is from overseas, we may not be able to respond to your request due to transportation or technology export issues.

 

Location information

Inside the NTT Atsugi R&D Center (Click here for a map)
Location 3-1 Morinosato Wakamiya, Atsugi City, Kanagawa Prefecture 243-0124
Nearest station Hon-Atsugi Station / Aiko-Ishida Station (Odakyu Line)
​Click here for information on other locations (headquarters, etc.)

Main public qualification

• Measurement certification office: Vibration acceleration level

Kanagawa Prefectural Weighing and Inspection Office No. 33

• Registered as a designated organization for working environment measurement

Kanagawa Labor Standards Bureau Registration No. 14-71

​Click here for other certifications and official qualifications